A strain-controlled magnetostrictive pseudo spin valve

Electric-field control of magnetism via an inverse magnetostrictive effect is alternative path toward improving energy-efficient storage and sensing devices based on a giant magnetoresistance effect. In this Letter, we report lateral electric-field driven strain-mediated modulation magnetotransport properties in Co/Cu/Py pseudo spin valve grown ferroelectric 0.7Pb[Mg 1/3 Nb 2/3 )]O 3 –0.3PbTiO substrate. We show decrease the ratio with increase electric field, which attributed to deviation Co layer magnetization from initial direction due strain-induced magnetoelastic anisotropy contribution. Additionally, demonstrate that magnetic effectively shifts switching field layer, while keeping nearly zero-magnetostrictive Py unaffected its negligible magnetostriction. argue magnetostrictively optimized films properly engineered multilayered structures can offer enhancing selective spintronic devices.